Prof. Tae Joo Park’s group from Hanyang University, with its collaborators from Sk Hynix, Samsung Electronics and the Hyundai Motor company, have recently published an article featured in the Journal of Materials Chemistry C. The article compares the results for silicon nitride films grown by plasma based Atomic Layer Deposition (ALD) at 300 degrees C using both a traditional ICP (inductively coupled plasma) source and one of Meaglow’s newer hollow cathode plasma sources. The improvement with the hollow cathode source is striking! The paper presents results showing lower oxygen contamination, better Si:N ratios, improved wet etch resistance and some excellent electrical properties for the films grown with the hollow cathode. Our thanks to our agents in Korea, Paultec Co. Ltd. for facilitating our customer interactions there.