Professor Jiyoung Kim’s group at the University of Texas, Dallas, have recently published (see this link) some interesting work using tris(disilanyl)amine as a precursor and one of our UHV series hollow cathode plasma sources (pictured left) for the ALD growth of silicon nitride. They were able to get wet etch rates for 1:100 dilute HF of as low as 0.47 nm/min which they attributed to the material being slightly silicon rich. The growth per cycle was also quite high.
Professor Kim’s group actually have two hollow cathode sources. I wonder what they use the other one for? I must ask them one day, though it might be an industry related secret.