Congratulations to researchers at the Seoul National University of Science and Technology, who demonstrated high purity conformal growth of TiN using one of Meaglow’s hollow cathode plasma sources. The films were deposited at a high aspect ratio of 32:1 with step coverage of >98%, low resistivity, high density and low contamination levels, which is excellent for plasma based deposition. See the article recently published in J. Vac. Sci. Technol. here https://doi.org/10.1116/6.0003319
Home Meaglow News Excellent Results for High Aspect Ratio (32:1) TiN plasma deposition using hollow...